EFM 3i: Ion-Beam-Assisted Deposition (IBAD)

Features at a glance:
EFM-3i

Evaporation area ø 4-20 mm
Flux monitor
Integrated shutter
Gas inlet for additional rare gas ions
Ion focusing lens for Ion-Beam-Assisted Deposition ( IBAD )
Ion suppression
Crucible capacity up to about 300 mm
3
Mounting flange NW 35 CF
All other features same as
EFM 3




360° 3D-view:




For a quick check of all technical features please refer to the survey table and for the major dimensions to the technical reference drawing.download

The EFM 3i is specifically designed to facilitate layer-by-layer growth in cases where it does not occur naturally. Please refer to the application page.

It allows for the controlled evaporation of the target material, and the simultaneous generation of ions to create additional surface defects (Ion-Beam-Assisted Deposition, IBAD).

efm3i-drwg

The ions can be produced either by an intrinsic process from the evaporated target material, or from inert gases with the help of an integrated gas inlet. The ions are focused onto the substrate by an electro-static lens. This focusing lens can adjust the ratio of ions to neutrals within the deposition area at the target and hence the additionally induced defect density.

Alternatively sensitive substrate materials can be protected against ion bombardment by a repelling lens voltage (see EFM3s).

The dedicated EVC 300i power supply supports not only the evaporation process but also supplies the additional lens voltage and includes a sample current meter. Please refer to the
electronics page.

Due to the special design of the ionization region the max. crucible size is limited.

See also: J.Kirschner, H. Engelhard, and D. Hartung, Rev. Sci. Instrum., Vol. 73, No. 11, p. 3853-3860, 2002.

For more information see the related brochure.download