Small Spot Ion Source FOCUS FDG150; Applications

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Sputter Depth Profile with FDG 150 (4 keV ion energy, 2 μA beam current)
used for XPS depth profiling through a 100 nm SiO
2 layer on Si (001): The cross-over position of the Oxygen peak (O1s) and Silicon peak (Si2p) intensities indicates the thickness of the oxide layer.

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